Semiconductor device having a fin

ABSTRACT

Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on the fin. An active layer is disposed on the sacrificial layer. A gate insulating layer and a gate electrode are disposed along a second direction intersecting the first direction. The gate insulating layer covers substantially entire top, side and bottom surfaces of the active layer. A source or drain region is disposed on at least one side of the gate electrode on the substrate. A first concentration of germanium in a first region and a second region of the active layer is higher than a second concentration of germanium in a third region disposed between the first region and the second region.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. Non-Provisional Patent Application is a Divisional of U.S.patent application Ser. No. 14/802,898, filed on Jul. 17, 2015, thedisclosure of which is incorporated by reference herein in its entirety.

TECHNICAL FIELD

Exemplary embodiments of the present inventive concept relate to asemiconductor device, and more particularly to a semiconductor devicehaving a fin.

DISCUSSION OF RELATED ART

Semiconductor devices may operate at high speeds and low voltages. Aprocess of fabricating a semiconductor device may increase deviceintegration density.

Increased integration density can cause a short channel effect in afield effect transistor. A fin field effect transistor (FinFET), whichmay include a channel having a three-dimensional spatial structure, mayreduce the occurrence of the short channel effect.

SUMMARY

According to an exemplary embodiment of the present inventive concept, asemiconductor device includes a fin disposed on a substrate along afirst direction. A sacrificial layer is disposed on the fin. An activelayer is disposed on the sacrificial layer. A gate insulating layer anda gate electrode are disposed along a second direction intersecting thefirst direction. The gate insulating layer covers substantially entiretop, side and bottom surfaces of the active layer. A source or drainregion is disposed on at least one side of the gate electrode on thesubstrate. A first concentration of germanium in a first region and asecond region of the active layer is higher than a second concentrationof germanium in a third region disposed between the first region and thesecond region.

According to an exemplary embodiment of the present inventive concept, asemiconductor device includes a fin disposed on a substrate along afirst direction. A sacrificial layer is disposed on the fin. An activelayer is disposed on the sacrificial layer. A gate insulating layer anda gate electrode are disposed along a second direction intersecting thefirst direction. The gate insulating layer covers substantially entiretop, side and bottom surfaces of the active layer. A source or drainregion is disposed on at least one side of the gate electrode on thesubstrate. A width of each of a first region and a second region of theactive layer measured in the second direction is greater than a width ofa third region of the active layer measured in the second direction. Thethird region is disposed between the first region and the second region.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects and features of the present inventiveconcept will become more apparent by describing in detail exemplaryembodiments thereof with reference to the attached drawings, in which:

FIG. 1 is a perspective view of a semiconductor device according to anexemplary embodiment of the present inventive concept ;

FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;

FIG. 3 is a cross-sectional view taken along line B-B of FIG. 1;

FIG. 4 is a perspective view of a semiconductor device according to anexemplary embodiment of the present inventive concept ;

FIG. 5 is a cross-sectional view taken along line A-A of FIG. 4;

FIG. 6 is a cross-sectional view taken along line B-B of FIG. 4;

FIG. 7 is a cross-sectional view of a semiconductor device according toan exemplary embodiment of the present inventive concept ;

FIG. 8 is a cross-sectional view of a semiconductor device according toan exemplary embodiment of the present inventive concept ;

FIG. 9 is a perspective view of a semiconductor device according to anexemplary embodiment of the present inventive concept ;

FIG. 10 is a cross-sectional view taken along line A-A of FIG. 9;

FIG. 11 is a cross-sectional view taken along line B-B of FIG. 9;

FIG. 12 is a circuit diagram of a semiconductor device according toexemplary embodiments of the present inventive concept;

FIG. 13 is a layout diagram of the semiconductor device of FIG. 12;

FIG. 14 is a block diagram of a semiconductor device according toexemplary embodiments of the present inventive concept;

FIG. 15 is a block diagram of a semiconductor device according toexemplary embodiments of the present inventive concept;

FIG. 16 is a block diagram of a system-on-chip (SoC) system includingsemiconductor devices according to exemplary embodiments of the presentinventive concept;

FIG. 17 is a block diagram of an electronic system includingsemiconductor devices according to exemplary embodiments of the presentinventive concept;

FIGS. 18 through 20 are diagrams illustrating examples of asemiconductor system to which semiconductor devices according toexemplary embodiments of the present inventive concept may be applied;

FIGS. 21 through 27 are diagrams illustrating a method of fabricating asemiconductor device according to an exemplary embodiment of the presentinventive concept; and

FIGS. 28 through 39 are diagrams illustrating a method of fabricating asemiconductor device according to an exemplary embodiment of the presentinventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Aspects and features of the present inventive concept and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of exemplary embodiments of thepresent inventive concept and the accompanying drawings. Exemplaryembodiments of the present inventive concept may, however, be embodiedin many different forms and should not be construed as being limited tothe exemplary embodiments set forth herein. Like reference numerals mayrefer to like elements throughout the specification and drawings.

The terminology used herein is for the purpose of describing particularexemplary embodiments only and is not intended to be limiting of theinventive concept.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itcan be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, components, regions, layersand/or sections, these elements, components, regions, layers and/orsections should not be limited by these terms.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper”, and the like, may be used herein to describe one element orfeature's relationship to another element(s) or feature(s) asillustrated in the figures. It will be understood that the spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures.

Exemplary embodiments may be described herein with reference tocross-sectional illustrations that may be schematic illustrations ofidealized exemplary embodiments (and/or intermediate structures). Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, may occur. Thus,exemplary embodiments of the present inventive concept should not beconstrued as limited to the particular shapes of regions illustratedherein but are to include deviations in shapes that result, for example,from manufacturing.

Hereinafter, semiconductor devices according to exemplary embodiments ofthe present inventive concept will be described in more detail withreference to FIGS. 1 through 39.

FIG. 1 is a perspective view of a semiconductor device according to anexemplary embodiment of the present inventive concept. FIG. 2 is across-sectional view taken along line A-A of FIG. 1. FIG. 3 is across-sectional view taken along line B-B of FIG. 1.

Referring to FIGS. 1 through 3, a semiconductor device 1 may include asubstrate 100, a fin F, a device isolation layer 110, a sacrificiallayer 120, an active layer 130 a, source or drain regions 140, a gateinsulating layer 150, and a gate electrode 160.

The semiconductor device 1 according to an exemplary embodiment of thepresent inventive concept will hereinafter be described using a fin typetransistor (TR1) as an example. However, the present inventive conceptis not limited to this example.

Referring to FIGS. 1 through 3, the substrate 100 may be, for example, abulk silicon substrate. The substrate 100 may be a silicon substrate ormay be a substrate including a material such as silicon germanium,indium antimonide, lead telluride, indium arsenide, indium phosphide,gallium arsenide, or gallium antimonide.

The substrate 100 may include a base substrate and an epitaxial layerdisposed on the base substrate. If an active fin includes the epitaxiallayer disposed on the base substrate, the epitaxial layer may include anelement semiconductor material such as silicon or germanium. Theepitaxial layer may include a compound semiconductor such as a groupIV-INT compound semiconductor or a group III-V compound semiconductor.The group IV-IV compound semiconductor included in the epitaxial layermay be a binary or ternary compound including two or more of carbon (C),silicon (Si), germanium (Ge) and tin (Sn) or a compound obtained bydoping the binary or ternary compound with a group IV element. The groupIII-V compound semiconductor included in the epitaxial layer may be abinary, ternary, or quaternary compound composed of at least one ofaluminum (Al), gallium (Ga) and indium (In) (e.g., group III elements)bonded with one of phosphorus (P), arsenic (As) and antimony (Sb) (e.g.,group V elements).

In some exemplary embodiments of the present inventive concept, thesubstrate 100 may be an insulating substrate. For example, asilicon-on-insulator (SOI) substrate may be used. The SOI substrate mayreduce a delay time in the operation process of the semiconductor device1.

The fin F may be disposed on the substrate 100. In some exemplaryembodiments of the present inventive concept, the fin F may include asame material as the substrate 100. For example, if the substrate 10includes silicon, the fin F may also include silicon. However, thepresent inventive concept is not limited thereto, and modifications canbe made as desired. For example, in some exemplary embodiments of thepresent inventive concept, the substrate 100 and the fin F may includedifferent materials.

The fin F may extend along a first direction and may protrude from thesubstrate 100. In some exemplary embodiments of the present inventiveconcept, the fin F may be formed by partially etching the substrate 100,but the present inventive concept is not limited thereto.

In the drawings, the fin F may have a tapered cross-sectional shape. Inother words, the fin F may become wider from the top toward the bottom.However, the cross-sectional shape of the fin F is not limited to thetapered shape. In some exemplary embodiments of the present inventiveconcept, the cross-sectional shape of the fin F may be a quadrilateralshape. In some exemplary embodiments of the present inventive concept,the cross-sectional shape of the fin F may be a chamfered shape. Forexample, corners of the fin F may be rounded.

The device isolation layer 110 may cover side surfaces of the fin F. Insome exemplary embodiments of the present inventive concept, the deviceisolation layer 110 may be, for example, an insulating layer. The deviceisolation layer 110 may include, but is not limited to, a silicon oxide(SiO₂) layer, a silicon nitride (SiN) layer or a silicon oxynitride(SiON) layer.

In some exemplary embodiments of the present inventive concept, thedevice isolation layer 110 may be a shallow trench isolation (STI)layer, but the present inventive concept is not limited thereto. In someexemplary embodiments of the present inventive concept, the deviceisolation layer 110 may be a deep trench isolation (DTI) layer. However,the device isolation layer 110 according to exemplary embodiments of thepresent inventive concept is not limited to the device isolation layersillustrated in the drawings.

The sacrificial layer 120 may be disposed on the fin F. In an exemplaryembodiment of the present inventive concept, the sacrificial layer 120may include, for example, a semiconductor material. The sacrificiallayer 120 may include, for example, silicon (Si) or silicon germanium(SiGe). If the sacrificial layer 120 includes silicon germanium, theproportion of germanium (Ge) in the sacrificial layer 120 may be higheror lower than that of silicon (Si) included in the sacrificial layer120. The proportion of germanium in the sacrificial layer 120 may behigher than that of silicon (Si) in the sacrificial layer 120, which mayincrease the etch selectivity of the sacrificial layer 120 in asubsequent fabrication process. The sacrificial layer 120 according tothe current exemplary embodiment of the present inventive concept is notlimited to the above example, and the composition of the sacrificiallayer 120 can be changed as desired.

As illustrated in the drawings, the sacrificial layer 120 may bedisposed under portions of the active layer 130 a on which the source ordrain regions 140 are disposed and need not be disposed under a portionof the active layer 130 a on which the gate electrode 160 may bedisposed. The gate electrode 160 may penetrate the sacrificial layer 120and may completely surround the active layer 130 a. The gate electrode160 may completely cover top, side and bottom surfaces of the activelayer 130 a.

The active layer 130 a may be disposed on the sacrificial layer 120. Theactive layer 130 a may be used as a channel of a first transistor TR1.In some exemplary embodiments of the present inventive concept, thesacrificial layer 120 may include silicon (Si) or an insulatingmaterial. The active layer 130 a may include a semiconductor materialincluding silicon germanium.

The active layer 130 a may include an upper region 131 a, a middleregion 132 a, and a lower region 133 a. The upper region 131 a, themiddle region 132 a and the lower region 133 a of the active layer 130 amay be stacked sequentially. The upper region 131 a may be further fromthe substrate 100 than the middle region 132 a.

Three different surfaces of each of the upper region 131 a and the lowerregion 133 a of the active layer 130 a may face the gate electrode 160.Side surfaces of the middle region 132 a of the active layer 130 a mayface the gate electrode 160. Accordingly, the middle region 132 a mayhave relatively lower gate controllability than the upper region 131 aand a short channel effect may be relatively more likely to occur in themiddle region 132 a than in the upper region 131 a or the lower region133 a. The lower region 133 a may have a tri-gate structure.

Therefore, the concentration of germanium in the upper region 131 a orthe lower region 133 a of the active layer 130 a may be relativelyhigher than that of the germanium concentration in the middle region 132a disposed between the upper region 131 and the lower region 133 a ofthe active layer 130 a. For example, the concentration of germanium inthe upper region 131 a or the lower region 133 a may be relativelyhigher than that of germanium in the middle region 132 a by 25% or more,but the present inventive concept is not limited thereto. The middleregion 132 a may serve as a strain relief buffer (SRB) and may increasean operating current capability of the first transistor TR1.

Referring to FIG. 3, widths of the upper region 131 a and the lowerregion 133 a of the active layer 130 a measured in a second directionintersecting the first direction may be equal to a width of the middleregion 132 a measured in the second direction. The active layer 130 amay have a quadrilateral cross-sectional shape. The active layer 130 amay be separated from the fin F. The gate electrode 160 and the gateinsulating layer 150 may be disposed between the active layer 130 a andthe fin F.

The gate insulating layer 150 may completely cover a part of the activelayer 130 a. The gate insulating layer 150 may be conformally disposedalong the active layer 130 a. In some exemplary embodiments of thepresent inventive concept, the gate insulating layer 150 may be a high-klayer. In this case, the gate insulating layer 150 may include a high-kmaterial. In some exemplary embodiments of the present inventiveconcept, the high-k material may be, but is not limited to, HfO₂, Al₂O₃,ZrO₃, or TaO₂.

Although not specifically illustrated in the drawings, an interfacelayer may be disposed between the gate insulating layer 150 and theactive layer 130 a. The interface layer may reduce or prevent theoccurrence of a poor interface between the substrate 100 and the gateinsulating layer 150. The interface layer may include a low-k materiallayer having a dielectric constant (k) of 9 or less such as a siliconoxide layer (e.g., having a dielectric constant k of approximately 4) ora silicon oxynitride layer (e.g., having a dielectric constant k ofapproximately 4 to 8 according to contents of oxygen atoms and nitrogenatoms). The interface layer may include a silicate or any combination ofthe above exemplary layers.

The gate electrode 160 may be disposed on the gate insulating layer 150.The gate electrode 160 may completely surround the active layer 130 a.The first transistor TR1 according to an exemplary embodiment of thepresent inventive concept may have a gate all around (GAA) structure.

In some exemplary embodiments of the present inventive concept, the gateelectrode 160 may include a metal gate electrode. The gate electrode 160may include a metal. The metal included in the gate electrode 160 mayhave relatively high conductivity. For example, the metal may include,but is not limited to, aluminum (Al) and/or tungsten (W).

Although not specifically illustrated in the drawings, the gateelectrode 160 may include a work function layer, which may control awork function of the first transistor TRI. For example, if the firsttransistor TR1 is a p-channel metal oxide semiconductor (PMOS)transistor, the work function layer may include a P-type work functionlayer. The P-type work function layer may include at least one of TiNand TaN. The P-type work function layer may be, but is not limited to, asingle layer including, for example, TiN or a double layer including aTin lower layer and a TaN upper layer.

The source or drain regions 140 may be disposed on both sides of thegate electrode 160. In an exemplary embodiment of the present inventiveconcept, the source or drain regions 140 may be formed by, e.g., anepitaxial growth process. The source or drain regions 140 may bedisposed higher than the sacrificial layer 120. The source or drainregions 140 may cover the active layer 130 a. However, the shape of thesource or drain regions 140 according to exemplary embodiments of thepresent inventive concept is not limited to this example, and the shapeof the source or drain regions 140 may be changed as desired. Forexample, in some exemplary embodiments of the present inventive concept,the source or drain regions 140 may be formed by performing an ionimplant (IIP) process on the active layer 130 a.

When the semiconductor device 1 according to the current exemplaryembodiment is a PMOS transistor, the source or drain regions 140 mayinclude a compressive stress material. For example, the compressivestress material may be a material (e.g., SiGe) having a greater latticeconstant than silicon (Si). The compressive stress material may increasethe mobility of carriers in a channel region by applying compressivestress to the fin F. The sacrificial layer 120 disposed under the sourceor drain regions 140 may improve operating characteristics of the firsttransistor TR1 by applying compressive stress to the active layer 130 a.The amount of compressive stress applied to the active layer 130 a maybe adjusted by controlling the amount of germanium (Ge) included in thesacrificial layer 120.

If the semiconductor device 1 is an n-channel metal oxide semiconductor(NMOS) transistor, the source or drain regions 140 may include a samematerial as the substrate 100. For example, the source or drain regions140 may include a tensile stress material. For example, if the substrate100 includes silicon (Si), the source or drain regions 140 may includesilicon (Si) or a material (e.g., SiC) having a smaller lattice constantthan silicon (Si).

Although not specifically illustrated in the drawings, an interlayerinsulating film may be disposed on the device isolation layer 110. Theinterlayer insulating film may cover the sacrificial layer 120, thesource or drain regions 140, and the gate electrode 160.

In the semiconductor device 1 according an exemplary embodiment of thepresent inventive concept, the gate electrode 160 may be disposed underthe active layer 130 a, which may be used as a channel. Accordingly, theoperating current of the first transistor TR1 may be increased, and aleakage current may be reduced compared with when a fin type transistoris disposed directly on bulk silicon.

The concentration of germanium in the upper region 131 a and the lowerregion 133 a of the active layer 130 a may be higher than that of thegermanium concentration in the middle region 132 a. This may improve theoperating characteristics of the middle region 132 a, and reduce oreliminate the occurrence of a short channel effect. The short channeleffect may be relatively more likely to occur in the middle region 132 athan in the upper region 131 a or the lower region 133 a.

FIG. 4 is a perspective view of a semiconductor device 2 according to anexemplary embodiment of the present inventive concept. FIG. 5 is across-sectional view taken along line A-A of FIG. 4. FIG. 6 is across-sectional view taken along line B-B of FIG. 4. Descriptions ofelements substantially identical to those of the previous exemplaryembodiments may be omitted. The current exemplary embodiment of thepresent inventive concept may be described hereinafter focusing ondifferences from the previous exemplary embodiments of the presentinventive concept.

Referring to FIGS. 4 through 6 the semiconductor device 2 according toan exemplary embodiment of the present inventive concept might notinclude a sacrificial layer 120. The semiconductor device 2 according toan exemplary embodiment of the present inventive concept might notinclude a portion of an active layer 130 b which does not overlap a gateelectrode 160 or a gate insulating layer 150.

When a region of the active layer 130 b which overlaps the gateelectrode 160 or the gate insulating layer 150 is a first region and theother region of the active layer 130 b is a second region, the secondregion of the active layer 130 b might not exist. Therefore, the activelayer 130 b might not exist under the source or drain regions 140.Bottom surfaces of the source or drain regions 140 may contact the topsurface of the fin F, and side surfaces of the source or drain regions140 may contact the active layer 130 b and the gate insulating layer150. However, the present inventive concept is not limited thereto.Spacers (not illustrated) may be disposed between the source or drainregions 140 and the gate insulating layer 150.

In an exemplary embodiment of the present inventive concept, the sourceor drain regions 140 may be formed by, e.g., an epitaxial growthprocess. Although not specifically illustrated in the drawings, a seedlayer for epitaxial growth may be formed under the source or drainregions 140 in the epitaxial process. Impurities may be in-situ-doped inthe epitaxial process if desired.

In the drawings, the source or drain regions 140 are hexagonal. However,the shape of the source or drain regions 140 is not limited to thehexagonal shape. The source or drain regions 140 may have various shapesincluding, for example, a diamond shape, a rectangular shape and apentagonal shape by controlling conditions of the epitaxial process forforming the source or drain regions 140.

The active layer 130 b may connect the source or drain regions 140 andmay be used as a channel of a second transistor TR2. The active layer130 b may function as a nanowire.

A cross-section of the active layer 130 b may have an elliptical shape.An outer surface of each of an upper region 131 b and a lower region 133b of the active layer 130 b may be curved. Side surfaces of the middleregion 132 b of the active layer 130 b may face the gate electrode 160.Accordingly, the middle region 132 b may have relatively lower gatecontrollability than the upper region 13 lb and the lower region 133 b,which may have curved outer surface. The short channel effect may berelatively more likely to occur in the middle region 132 b than in theupper region 131 b or the lower region 133 b.

Therefore, the concentration of germanium in the upper region 131 b orthe lower region 133 b of the active layer 130 b according an exemplaryembodiment of the present inventive concept may be higher than that ofthe germanium concentration in the middle region 132 b disposed betweenthe upper region 131 b and the lower region 133 b. For example, theconcentration of germanium in the upper region 13 lb or the lower region133 b may be higher than that of the germanium concentration in themiddle region 132 b by 25% or more, but the present inventive concept isnot limited thereto. The middle region 132 b of the semiconductor device2 according to an exemplary embodiment of the present inventive conceptmay serve as an SRB and may increase the operating current capability ofthe second transistor TR2.

FIG. 7 is a cross-sectional view of a semiconductor device according toan exemplary embodiment of the present inventive concept. Descriptionsof elements substantially identical to those of the previous exemplaryembodiments may be omitted. The current exemplary embodiment of thepresent inventive concept may be described hereinafter focusing ondifferences from the previous exemplary embodiments of the presentinventive concept.

Referring to FIG. 7, an active layer 130 c of a semiconductor device 3according to an exemplary embodiment of the present inventive conceptmay have a different structure from the active layer 130 a of thesemiconductor device 1 described above.

Widths L1 or L3 of an upper region 131 c or a lower region 133 c of theactive layer 130 c measured in a second direction intersecting a firstdirection in which the gate electrode 160 extends may be greater than awidth L2 of a middle region 132 c measured in the second direction. Thewidth L2 of the middle region 132 c may be smaller than the width L1 orL3 of the upper region 131 c or the lower region 133 c. The width L1 ofthe upper region 131 c may be equal to the width L3 of the lower region133 c, but the present inventive concept is not limited thereto.

The active layer 130 c may be disposed separately from the fin F. Thegate electrode 160 and the gate insulating layer 150 may be disposedbetween the active layer 130 c and the fin F. The gate insulating layer150 may be conformally disposed along the active layer 130 c.

Three different surfaces of each of the upper region 131 c and the lowerregion 133 c of the active layer 130 c may face the gate electrode 160.Side surfaces of the middle region 132 c of the active layer 130 c mayface the gate electrode 160.

The concentration of germanium in the upper region 131 c or the lowerregion 133 c of the active layer 130 c may be higher than the germaniumconcentration in the middle region 132 c disposed between the upperregion 131 c and the lower region 133 c of the active layer 130 c. Forexample, the concentration of germanium in the upper region 131 c or thelower region 133 c may be higher than the germanium concentration in themiddle region 132 c by 25% or more, but the present inventive concept isnot limited thereto. The middle region 132 c may serve as an SRB and mayincrease the operating current capability of a third transistor TR3.

FIG. 8 is a cross-sectional view of a semiconductor device according toan exemplary embodiment of the present inventive concept. Descriptionsof elements substantially identical to those of the previous exemplaryembodiments may be omitted. The current exemplary embodiment of thepresent inventive concept may be described hereinafter focusing ondifferences from the previous exemplary embodiments of the presentinventive concept.

Referring to FIG. 8, an active layer 130 d of a semiconductor device 4according to an exemplary embodiment of the present inventive conceptmay have a different structure from the active layer 130 c of thesemiconductor device 3 described above.

A cross-section of the active layer 130 d may have an elliptical shape.Outer surfaces of each of an upper region 131 d and a lower region 133 dof the active layer 130 d may be curved. Side surfaces of a middleregion 132 d of the active layer 130 d may face the gate electrode 160.

A width of the upper region 131 d or the lower region 133 d of theactive layer 130 d measured in a second direction intersecting a firstdirection in which the gate electrode 160 extends may be greater than awidth of the middle region 132 d measured in the second direction. Thewidth of the middle region 132 d may be smaller than the width of theupper region 131 d or the lower region 133 d. The concentration ofgermanium in the upper region 131 d or the lower region 133 d of theactive layer 130 d may be higher than the germanium concentration in themiddle region 132 d disposed between the upper region 131 d and thelower region 133 d of the active layer 130 d.

FIG. 9 is a perspective view of a semiconductor device according to anexemplary embodiment of the present inventive concept. FIG. 10 is across-sectional view taken along line A-A of FIG. 9. FIG. 11 is across-sectional view taken along line B-B of FIG. 9. Descriptions ofelements substantially identical to those of the previous exemplaryembodiments may be omitted. The current exemplary embodiment of thepresent inventive concept may be described hereinafter focusing ondifferences from the previous exemplary embodiments of the presentinventive concept.

Referring to FIGS. 9 through 11, a semiconductor device 5 may include asubstrate 200, a fin Fl, a device isolation layer 210, an active layer230, source or drain regions 240, a gate insulating layer 250, and agate electrode 260.

The fin F may be disposed on the substrate 200 along a first direction.The fin F1 may include a first region 231 and a second region 232. Thesecond region 232 may be closer to the substrate 200 than the firstregion 231. The concentration of germanium in the first region 231 maybe higher than the concentration of germanium in the second region 232.

Although not specifically illustrated in the drawings, the first region231 may include a first sub-region and a second sub-region. The firstsub-region may be disposed adjacent to the substrate 200, and the secondsub-region may be disposed farther from the substrate 200 than the firstsub-region. The concentration of germanium in the first sub-region maybe lower than the concentration of germanium in the second sub-region.The concentration of germanium may gradually increase toward an end ofthe fin F1.

Although not specifically illustrated in the drawings, a width of thefirst region 231 measured in a second direction intersecting a firstdirection in which the gate electrode 260 extends may be greater than awidth of the second region 232 measured in the second direction. Anupper portion of the fin Fl disposed on the substrate 200 may be widerthan a lower portion thereof. The fin F1 may have a taperedcross-sectional shape and may become wider from the top toward thebottom, but the present inventive concept is not limited thereto.

The gate insulating layer 250 and the gate electrode 260 may be disposedon the fin F1 and may partially cover the fin F1 along the seconddirection.

The source or drain regions 240 may be disposed on the fin Fl and may belocated on at least one side of the gate electrode 260.

Spacers 270 may be disposed on at least one side of the gate electrode260, and the source or drain regions 240 may be separated from the gateelectrode 260 by the spacers 270. The spacers 270 may be disposed onsidewalls of the gate electrode 260 and sidewalls of the fin F1. Forexample, an insulating layer may be disposed on a structure includingthe gate electrode 260. An etch-back process may be performed to formthe spacers 270. Each of the spacers 270 may include, but is not limitedto, a silicon nitride layer or a silicon oxynitride layer. A sidesurface of each of the spacers 270 may be curved. However, the presentinventive concept is not limited thereto, and the shape of the spacers270 may be changed as desired. For example, in some exemplaryembodiments of the present inventive concept, the shape of the spacers270 may be an ‘I’ shape or an ‘L’ shape.

If the semiconductor device 5 is formed by a replacement process (or agate last process), the gate insulating layer 250 may be formed toextend upward along sidewalls of the spacers 270.

The gate insulating layer 250 may include a high-k material having ahigher dielectric constant than a silicon oxide layer. For example, thegate insulating layer 250 may include HfO₂, ZrO₂, or Ta₂O₅. The gateinsulating layer 250 may be disposed substantially conformally alongsidewalls and a bottom surface of a trench.

The gate electrode 260 may include metal layers (e.g., MG1 and MG2). Thegate electrode 260 may be formed by stacking two or more metal layers(e.g., MG1 and MG2). A first metal layer MG1 may control a workfunction, and a second metal layer MG2 may fill a space formed by thefirst metal layer MG1. For example, the first metal layer MG1 mayinclude at least one of TiN, TaN, TiC, and TaC. The second metal layerMG2 may include W or Al. The gate electrode 260 may include a material(e.g., Si or SiGe) other than a metal.

FIG. 12 is a circuit diagram of a semiconductor device according toexemplary embodiments of the present inventive concept. FIG. 13 is alayout diagram of the semiconductor device 10 of FIG. 12. Descriptionsof elements substantially identical to those of the previous exemplaryembodiments may be omitted. The current exemplary embodiment of thepresent inventive concept may be described hereinafter focusing ondifferences from the previous exemplary embodiments of the presentinventive concept.

Referring to FIGS. 12 and 13, a semiconductor device 10 may include afirst inverter INV1 and a second inverter INV2. The first and secondinverters INV1 and INV2 may be connected in parallel between a powersource node VCC and a ground node VSS. First and second pass transistorsPS1 and PS2 may be respectively connected to output nodes of the firstand second inverters INV1 and INV2. The first and second passtransistors PS1 and PS2 may be connected to a bit line BL and acomplementary bit line BLb, respectively. Gates of the first and secondpass transistors PS1 and PS2 may be connected to a word line WL.

The first inverter INV1 may include a first pull-up transistor PU1 and afirst pull-down transistor PD1. The first pull-up transistor PU1 and thefirst pull-down transistor PD1 may be connected in series. The secondinverter INV2 may include a second pull-up transistor PU2 and a secondpull-down transistor PD2. The second pull-up transistor PU2 and thesecond pull-down transistor PD2 may be connected in series. The firstand second pull-up transistors PU1 and PU2 may be p-channel field effecttransistors (PFETs), and the first and second pull-down transistors PD1and PD2 may be n-channel field effect transistors (NFETs).

An input node of the first inverter INV1 may be connected to the outputnode of the second inverter INV2. An input node of the second inverterINV2 may be connected to the output node of the first inverter INV1. Thefirst and second inverters INV1 and INV2 may form a single latchcircuit.

Referring again to FIGS. 12 and 13, a first active fin 310, a secondactive fin 320, a third active fin 330 and a fourth active fin 340 mayextend in a first direction (e.g., a vertical direction in FIG. 13) andmay be separated from each other. The second active fin 320 and thethird active fin 330 may be shorter than the first active fin 310 andthe fourth active fin 340. The first active fin 310, the second activefin 320, the third active fin 330 and the fourth active fin 340 may bedisposed on a substrate 302.

A first gate electrode 351, a second gate electrode 352, a third gateelectrode 353, and a fourth gate electrode 354 may extend in a seconddirection (e.g., a horizontal direction in FIG. 13) and may intersectthe first through fourth active fins 310 through 340. The first gateelectrode 351 may completely intersect the first active fin 310 and thesecond active fin 320 and may partially overlap an end of the thirdactive fin 330. The third gate electrode 353 may completely intersectthe fourth active fin 340 and the third active fin 330 and may partiallyoverlap an end of the second active fin 320. The second gate electrode352 and the fourth gate electrode 354 may intersect the first active fin310 and the fourth active fin 340, respectively.

The first pull-up transistor PU1 may be disposed near the intersectionof the first gate electrode 351 and the second active fin 320. The firstpull-down transistor PD1 may be disposed near the intersection of thefirst gate electrode 351 and the first active fin 310. The first passtransistor PS1 may be disposed near the intersection of the second gateelectrode 352 and the first active fin 310. The second pull-uptransistor PU2 may be disposed near the intersection of the third gateelectrode 353 and the third active fin 330. The second pull-downtransistor PD2 may be disposed near the intersection of the third gateelectrode 353 and the fourth active fin 340. The second pass transistorPS2 may be disposed near the intersection of the fourth gate electrode354 and the fourth active fin 340.

Although not specifically illustrated in the drawings, source and drainregions may be disposed on sides of each of the intersections betweenthe first through fourth gate electrodes 351 through 354 and the firstthrough fourth active fins 310 through 340, respectively. A plurality ofcontacts 350 may be disposed in the regions of the first through fourthgate electrodes 351 through 354 and the first through fourth active fins310 through 340.

A first shared contact 361 may connect the second active fin 320, thethird gate electrode 353, and wiring 371. A second shared contact 362may connect the third active fin 330, the first gate electrode 351, andwiring 372.

The semiconductor device 10 may be included in, e.g., a static randomaccess memory (SRAM). At least one transistor (e.g., PU1 and PU2, PD1and PD2, and PS1 and PS2) included in the semiconductor device 10 mayemploy the configuration according to an exemplary embodiment of thepresent inventive concept. For example, the first and second pull-uptransistors PU1 and PU2, the first and second pass transistors PS1 andPS2, or the first and second pull-down transistors PD1 and PD2illustrated in FIG. 11 may be configured according to the transistorsTR1 through TR5 illustrated in FIGS. 1 through 11.

FIG. 14 is a block diagram of a semiconductor device according toexemplary embodiments of the present inventive concept. FIG. 15 is ablock diagram of a semiconductor device according to exemplaryembodiments of the present inventive concept.

Referring to FIG. 14, the semiconductor device 13 may include a logicregion 410 and an SRAM region 420. An eleventh transistor 411 may bedisposed in the logic region 410, and a twelfth transistor 421 may bedisposed in the SRAM region 420.

In some exemplary embodiments of the present inventive concept, theeleventh transistor 411 and the twelfth transistor 421 may havedifferent conductivity types from each other, but the present inventiveconcept is not limited thereto.

Referring to FIG. 15, the semiconductor device 14 may include the logicregion 410. Thirteenth and fourteenth transistors 412 and 422 which maybe different from each other may be disposed in the logic region 410.Although not specifically illustrated in the drawing, the thirteenth andfourteenth transistors 412 and 422 may be disposed in the SRAM region.

In some exemplary embodiments of the present inventive concept, thethirteenth transistor 412 and the fourteenth transistor 422 may havedifferent conductivity types from each other.

In some exemplary embodiments of the present inventive concept, thethirteenth transistor 412 and the fourteenth transistor 422 may have thesame conductivity type as each other. The first transistor TR1illustrated in FIG. 1 may be employed as the thirteenth transistor 412,and the second transistor TR2 illustrated in FIG. 4 may be employed asthe fourteenth transistor 422. However, the present inventive concept isnot limited thereto.

In FIG. 15, the logic region 410 is illustrated as an example, but thepresent inventive concept is not limited to this example. Exemplaryembodiments of the present inventive concept may also be applied thelogic region 410 and a region where another memory (e.g., DRAM, MRAM,RRAM, or PRAM) is formed.

FIG. 16 is a block diagram of a system-on-chip (SoC) system includingsemiconductor devices according to exemplary embodiments of the presentinventive concept.

Referring to FIG. 16, a SoC system 1000 may include an applicationprocessor 1001 and a dynamic random access memory (DRAM) 1060.

The application processor 1001 may include a central processing unit(CPU) 1010, a multimedia system 1020, a multilevel interconnect bus1030, a memory system 1040, and a peripheral circuit 1050.

The CPU 1010 may perform operations needed to drive the SoC system 1000.In some exemplary embodiments of the present inventive concept, the CPU1010 may be configured as a multi-core environment including a pluralityof cores.

The multimedia system 1020 may be used to perform various multimediafunctions in the SoC system 1000. The multimedia system 1020 may includea 3D engine module, a video codec, a display system, a camera system,and a post-processor.

The bus 1030 may be used for data communication among the CPU 1010, themultimedia system 1020, the memory system 1040 and the peripheralcircuit 1050. In some exemplary embodiments of the present inventiveconcept, the bus 1030 may have a multilayer structure. Specifically, themultilevel interconnect bus 1030 may be, but is not limited to, amultilayer advanced high-performance bus (AHB) or a multilayer advancedextensible interface (AXI).

The memory system 1040 may provide an environment for the applicationprocessor 1001 to be connected to an external memory (e.g., the DRAM1060) and operate at high speed. In some exemplary embodiments of thepresent inventive concept, the memory system 1040 may include acontroller (e.g., a DRAM controller) for controlling the external memory(e.g., the DRAM 1060).

The peripheral circuit 1050 may provide an environment for the SoCsystem 1000 to connect to an external device (e.g., a mainboard).Accordingly, the peripheral circuit 1050 may include various interfacesthat enable the external device connected to the SoC system 1000 to becompatible with the SoC system 1000.

The DRAM 1060 may function as an operating memory for the operation ofthe application processor 1001. In some exemplary embodiments of thepresent inventive concept, the DRAM 1060 may be disposed outside theapplication processor 1001. The DRAM 1060 may be packaged with theapplication processor 1001 in the form of a package on package (PoP).

At least one of the elements of the SoC system 1000 may employ any oneof the semiconductor devices 1 through 5 according to theabove-described exemplary embodiments of the present inventive concept.

FIG. 17 is a block diagram of an electronic system includingsemiconductor devices according to exemplary embodiments of the presentinventive concept.

Referring to FIG. 17, the electronic system 1100 may include acontroller 1110, an input/output (I/O) device 1120, a memory device1130, an interface 1140 and a bus 1150. The controller 1110, the I/Odevice 1120, the memory device 1130 and/or the interface 1140 may beconnected to one another by the bus 1150. The bus 1150 may be a path fortransmitting data.

The controller 1110 may include at least one of a microprocessor, adigital signal processor, a microcontroller and logic devices capable ofperforming similar functions to those of a microprocessor, a digitalsignal processor and a microcontroller. The I/O device 1120 may includea keypad, a keyboard and a display device. The memory device 1130 maystore data and/or commands. The interface 1140 may transmit data to orreceive data from a communication network. The interface 1140 may be awired or wireless interface. According to an exemplary embodiment of thepresent inventive concept, the interface 1140 may include an antenna ora wired or wireless transceiver.

Although not illustrated in the drawing, the electronic system 1100 maybe an operating memory operating the controller 1110, and may include ahigh-speed DRAM or SRAM. Any one of the semiconductor devices 1 through5 according to the above-described exemplary embodiments of the presentinventive concept may be employed as the operating memory. Any one ofthe semiconductor devices 1 through 5 according to the above-describedexemplary embodiments of the present inventive concepts may be includedin the memory device 1130 or in the controller 1110 or the I/O device1120.

The electronic system 1100 may be applied to nearly all types ofelectronic products capable of transmitting and/or receiving information(e.g., in a wireless environment), such as a personal data assistant(PDA), a portable computer, a web tablet, a wireless phone, a mobilephone, a digital music player, or a memory card.

FIGS. 18 through 20 are diagrams illustrating examples of asemiconductor system to which semiconductor devices according toexemplary embodiments of the present inventive concept may be applied.

FIG. 18 illustrates a tablet personal computer (PC) 1200, FIG. 19illustrates a notebook computer 1300, and FIG. 20 illustrates asmartphone 1400. At least one of the semiconductor devices 1 through 5according to exemplary embodiments of the present inventive concept maybe used in the tablet PC 1200, the notebook computer 1300, and/or thesmartphone 1400.

The semiconductor devices 1 through 5 according to exemplary embodimentsof the present inventive concept may also be applied to various devicesother than those set forth herein. While the tablet PC 1200, thenotebook computer 1300, and the smartphone 1400 have been describedabove as examples of a semiconductor system according to an exemplaryembodiment of the present inventive concept, the examples of thesemiconductor system according to the exemplary embodiments are notlimited to the tablet PC 1200, the notebook computer 1300, and thesmartphone 1400. In some exemplary embodiments of the present inventiveconcept, the semiconductor system may be used in a computer, an UltraMobile PC (UMPC), a work station, a net-book computer, a PDA, a portablecomputer, a wireless phone, a mobile phone, an e-book, a portablemultimedia player (PMP), a portable game console, a navigation device, ablack box, a digital camera, a 3-dimensional television set, a digitalaudio recorder, a digital audio player, a digital picture recorder, adigital picture player, a digital video recorder, or a digital videoplayer.

Methods of fabricating a semiconductor device according to exemplaryembodiments of the present inventive concept will now be described inmore detail below with reference to FIGS. 21 through 39.

FIGS. 21 through 27 are diagrams illustrating a method of fabricating asemiconductor device according to an exemplary embodiment of the presentinventive concept.

Referring to FIG. 21, a sacrificial layer 120 may be formed on thesubstrate 100. A first epitaxial layer 133 may be formed on thesacrificial layer 120. The first epitaxial layer 133 may be formed by,e.g., an epitaxial growth process. The first epitaxial layer 133 mayinclude, for example, silicon germanium (SiGe). A second epitaxial layer132 may be formed on the first epitaxial layer 133. The second epitaxiallayer 132 may be formed by, e.g., an epitaxial growth process. Thesecond epitaxial layer 132 may include, e.g., silicon (Si) or silicongermanium (SiGe). Since the first epitaxial layer 133 and the secondepitaxial layer 132 may have similar lattice structures, the secondepitaxial layer 132 may grow well on the first epitaxial layer 133.

Referring to FIS. 21 and 22, an oxidation process for germaniumcondensation may be performed on the second epitaxial layer 132. Theoxidation process may cause germanium to be pushed to an upper end ofthe second epitaxial layer 132, thereby forming a third epitaxial layer131 with a relatively high concentration of germanium.

In the process of forming the third epitaxial layer 131, silicon oxide(SiO₂) may be deposited on the third epitaxial layer 131. When thesilicon oxide is removed, the sacrificial layer 120, the first epitaxiallayer 133, the second epitaxial layer 132, and the third epitaxial layer131 may be formed sequentially on the substrate 100. The concentrationof germanium in the first epitaxial layer 133 and the third epitaxiallayer 131 may be relatively higher than the concentration of germaniumin the second epitaxial layer 132. For example, the concentration ofgermanium in the first epitaxial layer 133 and the third epitaxial layer131 may be higher than the concentration of germanium in the secondepitaxial layer 132 by 25% or more, but the present inventive concept isnot limited thereto.

Referring to FIG. 23, the third epitaxial layer 131, the secondepitaxial layer 132, the first epitaxial layer 133, the sacrificiallayer 120, and the substrate 100 may be etched. The etching of the thirdepitaxial layer 131, the second epitaxial layer 132, the first epitaxiallayer 133, the sacrificial layer 120, and the substrate 100 may beperformed sequentially. The etching of the first through third epitaxiallayers 133 through 131 may form the active layer 130 a, and the etchingof an upper portion of the substrate 100 may form the fin F. A deviceisolation layer 110 may be formed covering the fin F.

According to exemplary embodiments of the present inventive concept, amethod of forming the fin F, the sacrificial layer 120, and the activelayer 130 a is not limited to the above method. In some exemplaryembodiments of the present inventive concept, the fin F, the sacrificiallayer 120 and the active layer 130 a may be formed using a differentmethod. For example, a fourth epitaxial layer including silicon may beformed on the substrate 100, which may include an insulating material. Afifth epitaxial layer including silicon germanium may be formed on thefourth epitaxial layer. A sixth epitaxial layer including silicon may beformed on the fifth epitaxial layer.

The sixth epitaxial layer, the fifth epitaxial layer, and the fourthepitaxial layer may be etched sequentially. The etching of the sixthepitaxial layer may form the active layer 130 a, the etching of thefifth epitaxial layer may form the sacrificial layer 120, and theetching of the fourth epitaxial layer may form the fin F. Accordingly, aSOI structure may be formed (e.g., the SOI structure illustrated in FIG.6).

Referring to FIG. 24, a dummy gate 160 may be formed covering thesacrificial layer 120 and the active layer 130 a. In some exemplaryembodiments of the present inventive concept, the dummy gate 160 mayinclude, for example, polysilicon (poly-Si). Source or drain regions 140may be formed on opposite sides of the dummy gate 160. In some exemplaryembodiments of the present inventive concept, the source or drainregions 140 may be formed on two sides of the dummy gate 160 using anepitaxial growth process. Accordingly, the source or drain regions 140may be formed higher than the sacrificial layer 120, as illustrated inFIG. 24, for example.

While the source or drain regions 140 may be formed by an epitaxialgrowth process, the present inventive concept is not limited thereto. Insome exemplary embodiments of the present inventive concept, the sourceor drain regions 140 may be formed in the active layer 130 a disposed ontwo sides of the dummy gate 160 by an IIP process. In some exemplaryembodiments of the present inventive concept, the source or drainregions 140 may be formed in a trench of the active layer 130 a disposedon two sides of the dummy gate 160. The trench may be formed bypartially etching the active layer 130 a disposed on two sides of thedummy gate 160, and the source or drain regions 140 may be formed in thetrench by, e.g., an epitaxial growth process.

Referring to FIG. 25, interlayer insulating films 182 and 184 may beformed covering the source or drain regions 140. An insulating layer maybe formed covering the source or drain regions 140 and the dummy gate160 and the insulating layer may then be etched to expose a top surfaceof the dummy gate 160. As a result, the interlayer insulating films 182and 184 may be formed.

In some exemplary embodiments of the present inventive concept, theinterlayer insulating films 182 and 184 may include, but are not limitedto, an oxide layer or an oxynitride layer.

Referring to FIG. 26, the exposed dummy gate 160 may be removed byetching. In some exemplary embodiments of the present inventive concept,the exposed dummy gate 160 may be etched twice. The exposed dummy gate160 may be etched using a dry etch process. Then, the remaining dummygate 160 may be etched again using a wet etch process. Accordingly, thewhole dummy gate 160 may be removed, thereby exposing the active layer130 a and the sacrificial layer 120.

Referring to FIGS. 26 and 27, the exposed sacrificial layer 120 may beetched. The sacrificial layer 120 under the exposed active layer 130 amay be removed. For example, the sacrificial layer 120 may be removed byusing variability in etch selectivities of the active layer 130 a andthe sacrificial layer 120. In FIG. 27, the active layer 130 a and thesacrificial layer 120 of FIG. 26 are highlighted.

In an exemplary embodiment of the present inventive concept, thesacrificial layer 120 may include, e.g., silicon. If the proportion ofgermanium in the active layer 130 a is higher than the proportion ofsilicon, the etch selectivity of silicon included in the sacrificiallayer 120 may increase. Therefore, the sacrificial layer 120 disposedunder the exposed active layer 130 a can be removed by performing a wetetch process using hydrochloric acid (HCl). This partial removing of thesacrificial layer 120 may produce a through hole 122 that penetrates thesacrificial layer 120.

Referring to FIGS. 1 through 3, the gate insulating layer 150 may beformed completely covering the exposed active layer 130 a (see, e.g.,FIG. 27). The gate insulating layer 150 may penetrate the sacrificiallayer 120 and may completely cover top, side and bottom surfaces of theactive layer 130 a. Then, a gate electrode 160 may be formed on the gateinsulating layer 150. The gate electrode 160 may penetrate thesacrificial layer 120 and may completely cover the top, side and bottomsurfaces of the active layer 130 a. Accordingly, the semiconductordevice 1 illustrated in FIGS. 1 through 3 may be fabricated.

In the above-described fabrication method, if the active layer 130 a isetched such that a cross-section thereof has an elliptical shape, thesemiconductor device 2 illustrated in FIGS. 4 through 6 may befabricated.

After the process discussed with reference to FIG. 27 is performed, if amiddle region of the active layer 130 a is etched using an etchselectivity according to the germanium concentration, the semiconductordevices 3 and 4 illustrated in FIGS. 7 and 8 may be fabricated.

FIGS. 28 through 39 are diagrams illustrating a method of fabricating asemiconductor device according to an exemplary embodiment of the presentinventive concept.

Referring to FIG. 28, a first epitaxial layer 232 may be formed on thesubstrate 200 by, e.g., an epitaxial growth process. The first epitaxiallayer 232 may include, e.g., silicon germanium (SiGe).

Referring to FIGS. 28 and 29, an oxidation process for germaniumcondensation may be performed on the first epitaxial layer 232. Theoxidation process may push germanium to an upper end of the firstepitaxial layer 232, thereby forming a second epitaxial layer 231 with arelatively high concentration of germanium.

In the process of forming the second epitaxial layer 231, silicon oxide(SiO₂) may be deposited on the second epitaxial layer 231. If thesilicon oxide is removed, the first epitaxial layer 232 and the secondepitaxial layer 231 may be formed sequentially on the substrate 200. Theconcentration of germanium in the second epitaxial layer 231 may behigher than the concentration of germanium in the first epitaxial layer232. For example, the concentration of germanium in the second epitaxiallayer 231 may be higher than the concentration of germanium in the firstepitaxial layer 232 by 25% or more, but the present inventive concept isnot limited thereto.

Referring to FIG. 30, the second epitaxial layer 231, the firstepitaxial layer 232, and the substrate 200 may be etched. The etching ofthe second epitaxial layer 231, the first epitaxial layer 232, and thesubstrate 200 may be performed sequentially. The etching of the firstepitaxial layer 232 and the second epitaxial layer 231 may form the finF1. The device isolation layer 210 may be formed covering both sidewallsof the fin F1. The device isolation layer 210 may include a materialincluding at least one of a silicon oxide layer, a silicon nitridelayer, and a silicon oxynitride layer.

Referring to FIG. 31, an upper portion of the device isolation layer 210may be recessed to expose an upper portion of the fin F1. The recessprocess may include a selective etching process.

A portion of the fin F1 which protrudes upward from the device isolationlayer 210 may be formed by using an epitaxial layer. After the formationof the device isolation layer 210, a portion of the fin Fl may be formedby an epitaxial process (e.g., without a recess process) using a topsurface of the fin Fl exposed by the device isolation layer 210 as aseed.

A doping process for controlling a threshold voltage may be performed onthe fin F1. If a fin type transistor is an NMOS transistor, boron (B)may be used as an impurity. If the fin type transistor is a PMOStransistor, phosphorous (P) or arsenic (As) may be used as impurities.

Referring to FIG. 32, an etching process may be performed using a maskpattern 2104, thereby forming a dummy gate insulating layer 241 and adummy gate electrode 243 which may extend in a first direction and mayintersect the fin F1.

For example, the dummy gate insulating layer 241 may include a siliconoxide layer, and the dummy gate electrode 243 may include polysilicon.

Referring to FIG. 33, spacers 270 may be formed on sidewalls of thedummy gate electrode 243 and sidewalls of the fin F1.

For example, an insulating layer may be foamed on the structure havingthe dummy gate electrode 243, and then an etch-back process may beperformed to form the spacers 270. The spacers 270 may expose a topsurface of the mask pattern 2104 and the top surface of the fin F1. Eachof the spacers 270 may include a silicon nitride layer or a siliconoxynitride layer.

Referring to FIG. 34, the interlayer insulating film 280 may be formedon the structure having the spacers 270. The interlayer insulating film280 may include a silicon oxide layer.

The interlayer insulating film 280 may be planarized until a top surfaceof the dummy gate electrode 243 is exposed. As a result, the maskpattern 2104 may be removed, and the top surface of the dummy gateelectrode 243 may be exposed.

Referring to FIG. 35, the dummy gate insulating layer 241 and the dummygate electrode 243 may be removed. The removal of the dummy gateinsulating layer 241 and the dummy gate electrode 243 may form a trench245 which may expose the device isolation layer 210.

Referring to FIGS. 36 through 38, the gate insulating layer 250 and thegate electrode 260 may be formed in the trench 245.

The gate insulating layer 250 may include a high-k material having ahigher dielectric constant than a silicon oxide layer. For example, thegate insulating layer 250 may include HfO₂, ZrO₂, or Ta₂O₅. The gateinsulating layer 250 may be formed along sidewalls and a bottom surfaceof the trench 245. The gate insulating layer 250 may be formedsubstantially conformally along the sidewalls and the bottom surface ofthe trench 245.

The gate electrode 260 may include metal layers (e.g., MG1 and MG2). Thegate electrode 260 may be formed by stacking two or more metal layers(e.g., MG1 and MG2). The first metal layer MG1 may control a workfunction, and the second metal layer MG2 may fill a space formed by thefirst metal layer MG1. For example, the first metal layer MG1 mayinclude at least one of TiN, TaN, TiC, and TaC. The second metal layerMG2 may include W or Al. The gate electrode 260 may include a material(e.g., Si or SiGe) other than a metal.

Referring to FIG. 39, recesses 285 may be formed in the fin F1 disposedon two sides of the gate electrode 260.

The recesses 285 may be formed in the fin F1 disposed on two sides ofthe gate electrode 260. Each of the recesses 285 may have slopingsidewalls. Thus, the recesses 285 may become wider as the distance fromthe substrate 200 increases. The recesses 285 may be wider than the finF1.

While the present inventive concept has been particularly shown anddescribed with reference to exemplary embodiments thereof, it will beunderstood by those of ordinary skill in the art that various changes inform and details may be made therein without departing from the spiritand scope of the present inventive concept.

What is claimed is:
 1. A semiconductor device comprising: a fin disposedon a substrate along a first direction; a sacrificial layer disposed onthe fin; an active layer disposed on the sacrificial layer; a gateinsulating layer and a gate electrode disposed along a second directionintersecting the first direction, wherein the gate insulating layercovers substantially entire top, side and bottom surfaces of the activelayer; and a source or drain region disposed on at least one side of thegate electrode on the substrate, wherein a width of each of a firstregion and a second region of the active layer measured in the seconddirection is greater than a width of a third region of the active layermeasured in the second direction, and wherein the third region isdisposed between the first region and the second region.
 2. Thesemiconductor device of claim 1, wherein a concentration of germanium inthe second region of the active layer is higher than a concentration ofgermanium in the third region.
 3. The semiconductor device of claim 1,wherein a concentration of germanium in the first region of the activelayer is higher than a concentration of germanium in the third region.4. The semiconductor device of claim 1, wherein outer surfaces of eachof the first region and the second region of the active layer arecurved.
 5. The semiconductor device of claim 1, wherein the secondregion of the active layer is in direct contact with the gate insulatinglayer.
 6. The semiconductor device of claim 1, wherein the first regionis disposed farther from the substrate than the second region.
 7. Asemiconductor device comprising: a fin disposed on a substrate along afirst direction; a sacrificial layer disposed on the fin; an activelayer disposed on the sacrificial layer; a gate insulating layer and agate electrode disposed along a second direction intersecting the firstdirection, wherein the gate insulating layer covers substantially entiretop, side and bottom surfaces of the active layer; and a source or drainregion disposed on at least one side of the gate electrode on thesubstrate, wherein a width of each of a first region and a second regionof the active layer measured in the second direction is greater than awidth of a third region of the active layer measured in the seconddirection, wherein the third region is disposed between the first regionand the second region, and wherein the second region is closer to thesubstrate than the first region along a direction orthogonal to an uppersurface of the substrate.
 8. The semiconductor device of claim 7,wherein a concentration of germanium in the first region of the activelayer is higher than a concentration of germanium in the third region.9. The semiconductor device of claim 8, wherein a concentration ofgermanium in the second region of the active layer is higher than aconcentration of germanium in the third region.
 10. The semiconductordevice of claim 7, wherein outer surfaces of each of the first regionand the second region of the active layer are curved.
 11. Thesemiconductor device of claim 7, wherein the second region of the activelayer is in direct contact with the gate insulating layer.